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Laser World of Photonics China 2018 returns to Shanghai in March

Laser World of Photonics China 2018 returns to Shanghai in March

Laser World of Photonics China — the biggest event for the Asian laser, optics and photonics industries — will be held March 14 to 16 at the Shanghai New International Expo Center More than 1000 exhibitors from all over the world are

Innovations Make Ultrafast Lasers Even Faster

Innovations Make Ultrafast Lasers Even Faster

Recent developments in Pockels cells and Faraday isolators are paving the way to increased power and higher repetition rates

Compact Deep UV System at 222.5 nm Based on Frequency Doubling of GaN Laser Diod

Compact Deep UV System at 222.5 nm Based on Frequency Doubling of GaN Laser Diod

Abstract: Laser light sources emitting in the deep ultraviolet wavelength range between 210 and 230 nm are of great interest for spectroscopic applications Here, a compact DUV diode laser system emitting at a

Generation of high-energy narrowband 2.05  μm pulses for seeding a Ho:YLF

Generation of high-energy narrowband 2.05  μm pulses for seeding a Ho:YLF

We experimentally demonstrate efficient generation of high-energy (82 μJ) narrowband 2 05 μm pulses pumped with 1 mJ broadband Ti:sapphire laser pulses, utilizing dual-chirped optical parametric amplification (DC-OPA) in a BBO crystal The narrowband

Premier visits Institute of Crystal Materials Shandong University

Premier visits Institute of Crystal Materials Shandong University

Premier Li Keqiang visited Shandong University (SDU) in Jinan, capital city of Shandong province, on April 21

Plasmonic Microcantilever with Remarkably Enhanced Photothermal Responses

Plasmonic Microcantilever with Remarkably Enhanced Photothermal Responses

Plasmonic nanostructures exhibit abundant optoelectronic properties We explore here the technological potentials of plasmonic nanostructures as active component to

Improving the Quality of GaN Crystals by Using Graphene or Hexagonal Boron Nitri

Improving the Quality of GaN Crystals by Using Graphene or Hexagonal Boron Nitri

Improving the Quality of GaN Crystals by Using Graphene or Hexagonal Boron Nitride Nanosheets Substrate