HOME Products Q-Switch KD*P DKDP Electro-optical Cell Q-switch

KD*P DKDP Electro-optical Cell Q-switch

         
    DKDP (KD*P) based Pockels cells are used for Q-switching applications from the 400 nm to about 1.1 μm. Most of commercial flashlamp pumped Nd:YAG lasers and low repetition rate DPSS Nd:YAG lasers are equipped with DKDP (KD*P) based Pockels cells for laser cavity Q-switching.  
  Applications  Pulsed laser system  
     Medical laser system  
     Aesthetic laser system  
         
  Features  High extinction ratio  
     Low insertion loss  
     High laser damage threshold  
     Low capacitance  
     Low current leakage  
         
         
Main Specification Transmission Range 400 nm to 1100 nm  
Clear Aperture 90%  
Insertion Loss <2%  
Coating AR@1064nm(R<0.2%), or customised upon request  
Damage threshold 1GW/cm² 10ns 10Hz at 1064nm  
Quarter-wave voltage ~3400V  

Item Clear Aperture Size/mm Quarter-wave Voltage/V Extinction Ratio Capacitance Insertion Loss Damage threshold/@10ns 1064nm 10Hz
D-Q08A 8 Φ19×27 ~3400V >1000:1 <5pF <2% 350MW/cm2
D-Q10A 10 Φ25.4×33 ~3400V >1000:1 <7pF <2% 350MW/cm2
D-Q10B 10 Φ32×36 ~3400V >1000:1 <7pF <2% 350MW/cm2
D-Q12A 12 Φ25.4×33 ~3400V >1000:1 <9pF <2% 350MW/cm2
D-Q12B 12 Φ32×36 ~3400V >1000:1 <9pF <2% 350MW/cm2
D-Q4.6A
Double crystal
4.6 Φ36×60 ~1700V >1000:1 <5pF <2% 350MW/cm2